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STS4DNFS30L
N-channel 30V - 0.044 - 4A SO-8 STripFETTM MOSFET plus SCHOTTKY rectifier
General features
MOSFET VDSS 30V SCHOTTKY IF(AV) 3A RDS(on) <0.056 VRRM 30V ID 4A VF(MAX) 0.51V S0-8
Description
This product associates the latest low voltage STripFETTM in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STS4DNFS30L Marking S4DNFS30L Package SO-8 Packaging Tape & reel
January 2007
Rev 4
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Contents
STS4DNFS30L
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STS4DNFS30L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (vgs = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C dual operation Value 30 30 16 4 2.5 16 2 Unit V V V A A A W
PTOT
1. Pulse width limited by safe operating area
Table 2.
Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt
Schottky absolute maximum ratings
Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current TL=125C =0.5 Value 30 20 3 75 1 1 10000 Unit V A A A A A V/s
tp = 10 ms Sinusoidal tp = 2 s Repetitive peak reverse current F=1 kHz Non repetitive peak reverse tp = 100 s current Critical rate of rise of reverse voltage
Table 3.
Rthj-a TJ Tstg
Thermal data
Thermal resistance junction-ambient MOSFET(1) Junction temperature Storage temperature range 62.5 -55 to 150 -55 to 150 C/W C/W C C
1. Mounted on FR-4 board (steady state)
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Electrical characteristics
STS4DNFS30L
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating, TC=125C VGS = 16V VDS = VGS, ID = 250A VGS = 10V, ID = 2A VGS = 5V, ID = 2A 1 0.044 0.051 0.055 0.065 Min. 30 1 10 100 Typ. Max. Unit V A A nA V
IDSS
IGSS VGS(th) RDS(on)
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDD = 24V, ID = 4A, VGS = 5V VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS= 15V, ID=2A Min. Typ. 5 330 90 40 6.5 3.6 2 9 Max. Unit S pF pF pF nC nC nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5.
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD=15 V, ID=2A, RG=4.7, VGS=5V (see Figure 12) VDD=15 V, ID=2A, RG=4.7, VGS=5V (see Figure 12) Min. Typ. 11 100 25 22 Max. Unit ns ns ns ns
Turn-off delay time Fall time
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STS4DNFS30L
Electrical characteristics
Table 7.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, VGS = 0 ISD = 4A, VDD = 15V di/dt = 100A/s, Tj = 150C (see Figure 14) 35 25 1.4 Test conditions Min Typ. Max 4 16 1.2 Unit A A V ns nC A
trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STS4DNFS30L
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STS4DNFS30L Figure 7. Gate charge vs. gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STS4DNFS30L
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STS4DNFS30L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
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Package mechanical data
STS4DNFS30L
SO-8 MECHANICAL DATA
DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
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STS4DNFS30L
Revision history
5
Revision history
Table 8.
Date 21-Jun-2004 10-Nov-2006 26-Jan-2007
.
Revision history
Revision 2 3 4 Complete version The document has been reformatted Typo mistakes on Table 1. Changes
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STS4DNFS30L
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